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 UTC HE8551 PNP EPITAXIAL SILIC ON TRANSISTOR
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
DESCRIPTION
The UTC HE8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications.
1
FEATURES
*Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *Complimentary to UTC HE8051
TO-92
1:EMITTER
2:BASE
3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified)
PARAMETER
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation(Ta=25) Collector Current Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO Pc Ic Tj TSTG
VALUE
-40 -25 -6 1 -1.5 150 -65 ~ +150
UNIT
V V V W A C C
ELECTRICAL CHARACTERISTICS (Tj=25C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note)
SYMBOL
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) VBE fT Cob
TEST CONDITIONS
Ic=-100A,IE=0 Ic=-2mA,IB=0 IE=-100A,Ic=0 VCB=-35V,IE=0 VEB=-6V,Ic=0 VCE=-1V,Ic=-5mA VCE=-1V,Ic=-100mA VCE=-1V,Ic=-800mA Ic=-800mA,IB=-80mA Ic=-800mA,IB=-80mA VCE=-1V,Ic=-10mA VCE=-10V,Ic=-50mA VCB=-10V,IE=0 f=1MHz
MIN
-40 -25 -6
TYP
MAX
UNIT
V V V nA nA
-100 -100 45 85 40 170 160 80 -0.28 -0.98 -0.66 190 9.0 500 -0.5 -1.2 -1.0
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwidth Product Output Capacitance
100
V V V MHz pF
UTC
UNISONIC TECHNOLOGIES
CO. LTD
1
QW-R201-047,A
UTC HE8551 PNP EPITAXIAL SILIC ON TRANSISTOR
CLASSIFICATION OF hFE2
RANK RANGE C 120-200 D 160-300 E 250-500
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
-0.5 3 10
Fig.2 DC current Gain
3 -10
Fig.3 Base-Emitter on Voltage
Ic,Collector current (mA)
Ic,Collector current (mA)
VCE=-1V IB=-3.0mA
-0.3
HFE, DC current Gain
-0.4
VCE=-1V
2 -10
2 10
IB=-2.5mA IB=-2.0mA
-0.2
IB=-1.5mA IB=-1.0mA
1 10
1 -10
-0.1
IB=-0.5mA
0 -0 -0.4 -0.8 -1.2 -1.6 -2.0 0 10 -1 -10 0 -10 1 -10 2 -10 3 -10
0 -10 0 -0.2 -0.4 -0.6 -0.8 -1.0
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.4 Saturation voltage
4 -10 3 10
Fig.5 Current gain-bandwidth product
3 10
Fig.6 Collector output Capacitance
Cob,Capacitance (pF)
Ic=10*IB
Current Gain-bandwidth product,fT(MHz)
Saturation voltage (mV)
VCE=-10V
2 10
3 -10
VBE(sat)
2 10
f=1MHz IE=0
2 -10
1 10
1 10
VCE(sat)
1 -10
-1 -10
0 -10
1 -10
2 -10
3 -10
0 10
0 -10
1 -10
2 -10
3 -10
0 10
0 -10
1 -10
2 -10
3 -10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES
CO. LTD
2
QW-R201-047,A


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